Method of fabricating electrically connected regions of opposite

Details Method of fabricating electrically connected regions of opposite Method of fabricating electrically connected regions of opposite

1981-10-27

1986-10-14

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29578, 29580, 29591, H01L 21441, H01L 21385

Patent

active

046170715

ABSTRACT:
The two transistors of a bipolar flip-flop structure are interconnected by using a polycrystalline silicon/metal silicide sandwich structure. The polycrystalline silicon is doped to correspond to the underlying regions of the transistor structures, and undesired PN junctions created thereby are eliminated by depositing refractory metal silicide on the upper surface of the polycrystalline silicon.

REFERENCES:
patent: 3648125 (1972-03-01), Peltzer
patent: 4322882 (1982-04-01), Vora
patent: 4398338 (1983-08-01), Tickle et al.
patent: 4418468 (1983-12-01), Vora et al.
patent: 4488350 (1984-12-01), Vora et al.
patent: 4512075 (1985-04-01), Vora et al.
IBM Technical Disclosure Bulletin, vol. 23, Dec. 1980, pp. 2727-2729, Howard et al; "Bipolar Memory Cell With Polysilicon-Metal Cross-Coupling".
IBM Technical Disclosure Bulletin, vol. 21, No. 12, May 1979, p. 4886, Berger et al; "Cross-Coupled Flip-Flop Transistors With Stacked Interconnection Lines".

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