Method of fabricating double-cylinder capacitor

Semiconductor device manufacturing: process – Making passive device – Stacked capacitor

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Details

438253, H01L 218242

Patent

active

061402028

ABSTRACT:
A method for fabricating a double-cylinder capacitor is provided. The double-cylinder capacitor has a storage electrode having dual, concentric cylinder structures. The dielectric layer and the top electrode are formed in sequence over the bottom electrode. The storage area is thus enlarged by the double-cylinder capacitor of the invention. Thus, the capacitance of the capacitor can be effectively increased.

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