Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1998-12-08
2000-10-31
Fourson, George
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438253, H01L 218242
Patent
active
061402028
ABSTRACT:
A method for fabricating a double-cylinder capacitor is provided. The double-cylinder capacitor has a storage electrode having dual, concentric cylinder structures. The dielectric layer and the top electrode are formed in sequence over the bottom electrode. The storage area is thus enlarged by the double-cylinder capacitor of the invention. Thus, the capacitance of the capacitor can be effectively increased.
Chern Horng-Nan
Lin Kun-Chi
Abbott Barbara Elizabeth
Fourson George
United Microelectronics Corp.
Wu Charles C. H.
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