Method of fabricating diode using grid recess

Details Method of fabricating diode using grid recess Method of fabricating diode using grid recess

1994-07-15

1995-05-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437184, 437902, H01L 21762

Patent

active

054181810

ABSTRACT:
Method of fabricating semiconductor devices includes forming an operation layer for forming elements on a first principal plane of a semiconductor substrate; forming a grid recess for separating the elements on the operation layer; forming a support layer in the grid recess; forming independent first electrodes corresponding to the elements, respectively, on the operation layer; removing a second principal plane of the substrate until the bottom of the grid recess is exposed; and etching and removing the operation layer along the grid recess to separate the elements from one another.

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patent: 4811079 (1989-03-01), Turina et al.
patent: 5145809 (1992-09-01), Walker
Apsley et al., Inst. Phys. Conf. Ser. No. 56: Chapter 7; pp. 483-491; 1981; The Institute of Physics; "Indium Phosphide Millimetere Wave Transferred Electron Oscillators". (no month).
Crowley et al.; Electronics Letters, vol. 16, No. 18, Aug. 28, 1980, pp. 705-706; "High Efficiency 90 GHz InP Gunn Oscillators".
Eddison; Infrared and Millimeter Waves, vol. 11, 1984, pp. 20-23. (no month).

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