Method of fabricating dielectric mixed layers and capacitive...

Details Method of fabricating dielectric mixed layers and capacitive... Method of fabricating dielectric mixed layers and capacitive...

2007-12-04

2007-12-04

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

C257SE21396

Reexamination Certificate

active

11125654

ABSTRACT:
The present invention provides a method for fabricating a capacitive element (100), a substrate (101) being provided as a first electrode layer of the capacitive element (100), the substrate (101) provided as an electrode layer is conditioned, a dielectric layer (102) is deposited on the conditioned substrate (101) and a second electrode layer (104) is applied on the layer stack produced, the layer stack being modified by a heat treatment in such a way that the dielectric layer (102) deposited on the conditioned substrate (101) forms a dielectric mixed layer (105) with a reaction layer (103) deposited on the dielectric layer (102), which dielectric mixed layer has an increased dielectric constant (k) or an increased thermal stability.

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Segda et al., “Study and Optimization of Alumina and Germanium Dioxide and Their Multilayer Capacitor Properties,”Nuclear Instruments and Methods in Physics Research B, vol. 170, pp. 105-114 (2000).

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