Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2005-11-15
2005-11-15
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S954000
Reexamination Certificate
active
06964930
ABSTRACT:
In fabricating a dielectric layer, a semiconductor substrate which has been washed is provided. A first nitride film is formed by loading the substrate in a first furnace and subjecting the substrate to a first nitride treatment. A first oxide film is formed by unloading the substrate having the first nitride film out of the first furnace and subjecting the substrate to a first nitride treatment by introducing air while the substrate is unloaded. A second nitride film is formed by loading the substrate having the first oxide film in a second furnace and subjecting the substrate to a second nitride treatment. A second oxide film is formed by subjecting the top surface of the second nitride film to a second oxide treatment.
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Lee Tae Hyeok
Park Cheol Hwan
Park Dong Su
Song Chang Rock
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Nhu David
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