Method of fabricating defect free trench isolation devices

Details Method of fabricating defect free trench isolation devices Method of fabricating defect free trench isolation devices

1985-02-14

1986-12-30

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 29580, 148175, 148DIG50, 148DIG85, 148DIG117, 156643, 156653, 156657, 357 50, H01L 21302, H01L 2176

Patent

active

046318038

ABSTRACT:
The specification discloses an isolation trench (36) formed in a semiconductor body. A stress relief layer (38) of oxide is formed on the interior walls of the trench (36), the layer (38) being sufficiently thin to prevent stressing of the lower corners of the trench (36). A masking layer (40) of nitride is formed over the layer (38). An isolation body (42) of oxide or polysilicon then refills the remainder of the trench and a cap oxide (43) and layer (44) of field oxide is formed over the semiconductor body and the filled trench.

REFERENCES:
patent: 4079506 (1978-03-01), Suzuki et al.
patent: 4396460 (1983-08-01), Tamaki et al.
patent: 4502914 (1985-03-01), Trumpp et al.
patent: 4519128 (1985-05-01), Chesebro et al.
patent: 4528047 (1985-07-01), Beyer et al.
patent: 4546538 (1985-10-01), Suzuki

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