Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-10-18
2005-10-18
Zarneke, David (Department: 2891)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S099000, C438S006000, C438S128000, C438S130000, C438S131000, C438S467000
Reexamination Certificate
active
06955926
ABSTRACT:
A magnetic data track used in a magnetic shift register memory system may be fabricated by forming a multilayered stack of alternating dielectric and/or silicon layers. Vias of approximately 10 microns tall with a cross-section on the order of 100 nm×100 nm are etched in this multilayered stack of alternating layers. Vias may be etched form smooth or notched walls. Vias are filled by electroplating layers of alternating types of ferromagnetic or ferrimagnetic metals. The alternating ferromagnetic or ferrimagnetic layers are comprised of magnetic materials with different magnetization or magnetic exchange or magnetic anisotropies. These different magnetic characteristics allow the pinning of magnetic domain walls at the boundaries between these layers. Alternatively, vias are filled with a homogeneous ferromagnetic material. Magnetic domain walls are formed by the discontinuity in the ferromagnetic or ferromagnetic material that occurs at the notches or at the protuberances along the via walls.
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Chen Tze-chiang
Parkin Stuart S. P.
Anya Igwe U.
International Business Machines - Corporation
Kassatly Samuel A.
Zarneke David
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