Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate
1999-03-03
2002-12-24
Mills, Gregory (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
C117S901000
Reexamination Certificate
active
06497762
ABSTRACT:
BACKGROUND OF THE INVENTION
This invention relates to a method of fabricating a crystal thin plate under a micro-gravity environment.
Crystals of metal oxides, semiconductors, etc. have been hitherto grown from a liquid phase. Examples of such crystal forming methods include a crystal pulling method for forming a silicon semiconductor single crystal of or a metal oxide single crystal, a melt growth method for forming a semiconductor such as GaAs using a crucible and a floating-zone method for forming a silicon single crystal or a compound semiconductor without using a crucible.
One problem of the above conventional methods is that it is difficult to obtain a high quality crystal having no defects. Another problem is that a relatively long time is required for the production of crystals.
SUMMARY OF THE INVENTION
It is, therefore, an object of the present invention to provide a method of producing a high quality crystal thin plate within a short period of time.
In accordance with the present invention there is provided a method of fabricating a crystal thin plate of a substance capable of forming a crystal, which includes the steps of:
forming a molten layer of the above substance on a support; and
cooling the molten layer in the atmosphere of an inert gas or in vacuum at a rate of 10-300° C. per second under a micro-gravity environment to solidify and crystallize the molten layer. The cooling is performed by contacting the support with a cooling medium.
REFERENCES:
patent: 59217692 (1983-12-01), None
Bollong et al., Analysis of Cd0.21Hg0.79Te Quenched in 10-4 g, Jpurnal of Crystal Growth, 94 (1989) 475-480.*
Askeland, The Science and Engineering of Materials, 2nd Edition, PWS-Kent Publishing, Boston, MA, USA, 1989.*
Wolf et al. Silicon Processing for the VLSI Era vol. 1: Process Technology, Lattice Press, Sunset Beach, CA, USA, pp. 17-18, 56-58, 124, 1986.*
Muller, ‘A Comparative Study of Crystal Growth Phenomena under Reduced and Enhanced Gravity,’ Journal of Crystal Growth, 99 (1990) 1242-157, 1990.*
Wolf et al., Silicon Processing in the VLSI Era, vol. 1: Process Technology, Lattice Press, Sunset Beach, CA, USA, pp. 1, 17, 56-58, 1986.
Ito Yoshiho
Minagawa Hideki
Nagai Hideaki
Nakata Yoshinori
Okutani Takeshi
Anderson Matthew
Director--General of Agency of Industrial Science and Technology
Lorusso & Loud
Mills Gregory
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