Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-10-17
2006-10-17
Hoang, Quoc (Department: 2818)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S240000, C438S508000
Reexamination Certificate
active
07122386
ABSTRACT:
A method of forming a Cu—Cu junction between a word line pad (WLP) and bit line (BL) contact is described. An opening above a WL contact is formed in a first SiNxlayer on a substrate that includes a WLP and word line. After a bottom electrode (BE) layer, MTJ stack, and hard mask are sequentially deposited, an etch forms an MTJ element above the word line. Another etch forms a BE and exposes the first SiNxlayer above the WLP and bond pad (BP). An MTJ ILD layer is deposited and planarized followed by deposition of a second SiNxlayer and BL ILD layer. Trenches are formed in the BL ILD layer and second SiNxlayer above the WLP, hard mask and BP. After vias are formed in the MTJ ILD and first SiNxlayers above the WLP and BP, Cu deposition follows to form dual damascene BL contacts.
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patent: 2006/0097298 (2006-05-01), Ho
Cao Wei
Torng Chyu-Jiuh
Wang Po-Kang
Zhong Tom
Ackerman LLC Stephen B.
Hoang Quoc
MagIC Technologies, Inc.
Saile Ackerman LLC
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