Method of fabricating contact pad for magnetic random access...

Semiconductor device manufacturing: process – Having magnetic or ferroelectric component

Reexamination Certificate

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C438S240000, C438S508000

Reexamination Certificate

active

07122386

ABSTRACT:
A method of forming a Cu—Cu junction between a word line pad (WLP) and bit line (BL) contact is described. An opening above a WL contact is formed in a first SiNxlayer on a substrate that includes a WLP and word line. After a bottom electrode (BE) layer, MTJ stack, and hard mask are sequentially deposited, an etch forms an MTJ element above the word line. Another etch forms a BE and exposes the first SiNxlayer above the WLP and bond pad (BP). An MTJ ILD layer is deposited and planarized followed by deposition of a second SiNxlayer and BL ILD layer. Trenches are formed in the BL ILD layer and second SiNxlayer above the WLP, hard mask and BP. After vias are formed in the MTJ ILD and first SiNxlayers above the WLP and BP, Cu deposition follows to form dual damascene BL contacts.

REFERENCES:
patent: 6709942 (2004-03-01), Pan et al.
patent: 6806096 (2004-10-01), Kim et al.
patent: 6912152 (2005-06-01), Iwata et al.
patent: 2003/0168684 (2003-09-01), Pan et al.
patent: 2006/0097298 (2006-05-01), Ho

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