Method of fabricating conducting oxide-silicon solar cells utili

Details Method of fabricating conducting oxide-silicon solar cells utili Method of fabricating conducting oxide-silicon solar cells utili

1978-11-22

1979-12-04

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29572, 136 89SG, 136 89SJ, 148 15, 148175, 357 4, 357 10, 357 16, 357 30, 357 59, 423618, 427 35, 427 42, 427 84, H01L 21203, H01L 2714, H01L 2126

Patent

active

041770935

ABSTRACT:
In preparing tin oxide and indium tin oxide-silicon heterojunction solar cells by electron beam sublimation of the oxide and subsequent deposition thereof on the silicon, the engineering efficiency of the resultant cell is enhanced by depositing the oxide at a predetermined favorable angle of incidence. Typically the angle of incidence is between 40.degree. and 70.degree. and preferably between 55.degree. and 65.degree. when the oxide is tin oxide and between 40.degree. and 70.degree. when the oxide deposited is indium tin oxide. gi

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