Method of fabricating compound semiconductor laser using selecti

Details Method of fabricating compound semiconductor laser using selecti Method of fabricating compound semiconductor laser using selecti

1988-03-15

1989-06-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG29, 148DIG48, 148DIG71, 148DIG94, 148 336, 156613, 156649, 156662, 357 17, 372 48, 372 50, 437133, 437173, 437935, 437936, 437963, H01L 0000, B05D 306

Patent

active

048430315

ABSTRACT:
Disclosed is a method of fabricating a compound semiconductor device which is capable of forming a multi-wavelength semiconductor laser structure, double cavity type semiconductor laser structure, stripe type semiconductor laser structure transverse junction stripe type semiconductor laser structure, or semiconductor grating by a single step of epitaxial growth while illuminating a desired part of substrate surface selectively with light at the time of epitaxial growth.

REFERENCES:
patent: 4318059 (1982-03-01), Lang et al.
patent: 4476563 (1984-10-01), Van Ruyven
patent: 4577207 (1986-03-01), Copeland
patent: 4607370 (1986-08-01), Mukai et al.
patent: 4627065 (1986-12-01), Logan et al.
Lee et al., "Photoluminescence . . . Selective-Area Molecular Beam Epitaxy . . . ", Appl. Phys. Lett., 52(3), Jan. 18, 1988, pp. 215-217.
Bedair et al., Appl. Phys. Lett., 48(2), Jan. 13, 1986, pp. 174-176.

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