Method of fabricating compound semiconductor device and optical

Coherent light generators – Particular active media – Semiconductor

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372 45, 385 43, 385131, H01S 319, G02B 610, G02B 626

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active

060349832

ABSTRACT:
A fabricating method of compound semiconductor device is proposed which has a step of varying selective growth ratio of crystal by changing either a mean free path of material gas in gas atmosphere for use in crystal growth or a thickness of a stagnant layer of the material gas, using selective growth mask having opening portion consisting of first region having a narrow width and second region having a wide width.

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