Method of fabricating CMOS image sensor

Details Method of fabricating CMOS image sensor Method of fabricating CMOS image sensor

2007-07-31

2010-06-29

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S065000, C257SE33001

Reexamination Certificate

active

07745251

ABSTRACT:
A method of manufacturing a complimentary metal oxide semiconductor (CMOS) image sensor. The method includes a step of performing a silicide process relative to a plug for transferring electrons generated from a photodiode. The silicide of the plug blocks light irradiated through the plug, so that the performance of the image sensor may be optimized.

REFERENCES:
patent: 6040593 (2000-03-01), Park
patent: 2006/0138494 (2006-06-01), Lee

Affiliated with

Also associated with

Rating

Method of fabricating CMOS image sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating CMOS image sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating CMOS image sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4246736