Method of fabricating CMOS image sensor

Details Method of fabricating CMOS image sensor Method of fabricating CMOS image sensor

2005-12-30

2008-08-26

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S065000, C438S066000, C438S070000

Reexamination Certificate

active

07416912

ABSTRACT:
A method of fabricating a CMOS image sensor is disclosed, by which image sensor characteristics are enhanced. In one aspect, the method includes forming a plurality of photodiodes in the photodiode region of a semiconductor substrate; stacking a first insulating layer over the semiconductor substrate including the photodiodes; forming a metal pad on the insulating layer in the pad region of the substrate; forming a second insulating layer over the semiconductor substrate including the metal pad; selectively etching exposed portions of the second insulating layer, using a mask, to form simultaneously a pad opening in the pad region and a trench in the photodiode region; selectively etching portions of the second insulating layer and the first insulating layer under the trench; and forming a slope on lateral sides of at least the second insulating layer.

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