Method of fabricating circuits

Details Method of fabricating circuits Method of fabricating circuits

1997-06-10

1999-06-15

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 62, 216 67, 438735, H01L 2100

Patent

active

059121874

ABSTRACT:
A method of fabricating an integrated circuit device is described in which fluorine ions are implanted into the patterned photoresist and the exposed polysilicon layer prior to etching the polysilicon. The ion implantation minimizes the chemical reaction between the photoresist and etchant, thereby significantly reducing the formation of polysilicon etch delta, and also significantly reducing etch delta variation due to pattern density variations.

REFERENCES:
patent: 4377437 (1983-03-01), Taylor et al.
patent: 4470871 (1984-09-01), White et al.
patent: 4504574 (1985-03-01), Meyer et al.
patent: 4968552 (1990-11-01), Linde
patent: 5215867 (1993-06-01), Stillwagon et al.

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