Method of fabricating capacitor

Details Method of fabricating capacitor Method of fabricating capacitor

2006-07-04

2006-07-04

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Resistor

C438S383000, C438S384000, C438S385000, C438S386000, C438S381000, C438S393000, C438S394000

Reexamination Certificate

active

07071070

ABSTRACT:
A method of fabricating a capacitor is described. A dielectric layer is formed over a substrate. An upper electrode having multiple openings therein is formed over the dielectric layer. Then, a doping step is performed to the substrate through the openings to form a single doped region as a lower electrode in the substrate under the upper electrode.

REFERENCES:
patent: 6190987 (2001-02-01), Kasai et al.

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