Method of fabricating buried insulating layers

Details Method of fabricating buried insulating layers Method of fabricating buried insulating layers

1990-04-02

1992-09-01

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 62, 437 83, H01L 21265, H01L 2176

Patent

active

051438585

ABSTRACT:
A thick buried insulating layer is formed by employing a multiple semiconductor layer growth/implant/anneal cycle. A first buried insulating layer is formed in a semiconductor substrate by implanting a dopant which reacts with the substrate to form an insulating layer and then annealing the substrate. Subsequently, a thin semiconductor layer is grown on the surface of the substrate. This is followed by a second implantation of the dopant which reacts with the substrate to form an insulating layer and an anneal to form a second buried insulating layer. The two buried insulating layers may be continuous to form a single, thick buried insulating layer or may be discontinuous to form two buried insulating layers separated by a semiconductor layer. The cycle may be repeated until a desirable thickness of the buried insulating layer is achieved or until a desirable number of buried insulating layers are formed.

REFERENCES:
patent: 4863878 (1989-09-01), Hite
Dale Hill et al., "The Reduction of Dislocations in Oxygen Implanted Silicon-on-Insulator Layers by Sequential Implantation and Anneal", J. Appl. Phys. 63(10), May 15, 1988 pp. 4933-4936.

Affiliated with

Also associated with

Rating

Method of fabricating buried insulating layers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating buried insulating layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating buried insulating layers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-767498