Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1979-06-29
1981-06-23
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29577C, 29578, 148174, 148187, 357 44, 357 50, 357 59, 357 92, 427 86, H01L 2120, H01L 2122
Patent
active
042748917
ABSTRACT:
A vertical pair of complementary, bipolar transistors is disclosed which includes a semiconductor substrate of one conductivity type and a pair of dielectric isolation regions disposed in contiguous relationship with the substrate. An injector region of opposite conductivity type is disposed between the pair of isolation regions. A pair of heavily doped, polycrystalline, semiconductor regions of the one conductivity type is disposed over and in registry with the pair of isolation regions. Similarly, a single crystal, semiconductor region of the one conductivity type is disposed over and in registry with the injector region. Finally, a first zone of opposite conductivity type is disposed in the single crystal region and a second zone of the one conductivity type is disposed in the first zone. In addition, a method of manufacturing a semiconductor device having vertical complementary, bipolar transistors is disclosed which includes the steps of forming regions of dielectric isolation which are contiguous with a semiconductor substrate and a region of semiconductor of one conductivity type therebetween, the semiconductor substrate being of opposite conductivity type; forming regions of heavily doped, polycrystalline semiconductor of the opposite conductivity type and a region of single crystal semiconductor of the opposite conductivity type in registry with the regions of dielectric isolation and the semiconductor region of one conductivity type, respectively. The method also includes the step of forming a zone of one conductivity type in the region of single crystal semiconductor and a zone of opposite conductivity type in the zone of one conductivity type.
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Silvestri Victor J.
Tang Denny D.
Wiedmann Siegfried K.
International Business Machines - Corporation
Kilgannon, Jr. Thomas J.
Rutledge L. Dewayne
Saba W. G.
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