Method of fabricating buried crescent semiconductor laser device

Details Method of fabricating buried crescent semiconductor laser device Method of fabricating buried crescent semiconductor laser device

1985-09-19

1988-03-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437129, 437133, 437972, H01L 21208

Patent

active

047286253

ABSTRACT:
A method of fabricating a semiconductor laser stably operable at high temperatures over long periods of time and with a low leakage current. A semiconductor wafer is prepared including a semiconductor substrate of a first conductivity type and a current blocking layer formed thereon, the current blocking layer including at least one semiconductor layer of a second conductivity type. A groove is formed in the upper surface of the wafer having a depth corresponding to at least the thickness of the current blocking layer. At least surface regions of the wafer are removed in the vicinity of the groove and upper sidewall surface regions of the groove using a semiconductor solution. A plurality of semiconductor crystal layers are then grown on the wafer, including a layer consistuting an active region in the groove, by liquid phase epitaxy.

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Hirano et al, "Position of the Degradation and the Improved Structure for the Burned Crescent in GaAs P/InP Lasers", in Appl. Phys. Lett. 43 (2), 15 Jul. 1983, pp. 187-189.

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