Method of fabricating buried control elements in semiconductor d

Details Method of fabricating buried control elements in semiconductor d Method of fabricating buried control elements in semiconductor d

1996-08-06

1997-12-23

Niebling, John

Fishing, trapping, and vermin destroying

437 29, 437 41, 437911, H01L 21265

Patent

active

057007039

ABSTRACT:
A method of fabricating buried control elements in a semiconductor device by providing a substrate and forming an epitaxial layer on the substrate. A native oxide is formed on the surface, and a mask is then positioned adjacent the surface so as to define a growth area and an unmasked portion. A bright light is selectively directed to grow an oxide film on the unmasked portion of the surface. After forming the oxide film, the native oxide on the growth area is desorbed and a buried control element layer is grown on the epitaxial layer. Subsequently, the oxide film is desorbed and the epitaxial layer is regrown, thereby burying the buried control element layer.

REFERENCES:
patent: 5196358 (1993-03-01), Boos
patent: 5318915 (1994-06-01), Baliga et al.
patent: 5378642 (1995-01-01), Brown et al.
patent: 5385855 (1995-01-01), Brown et al.
patent: 5486484 (1996-01-01), Malhi
patent: 5500377 (1996-03-01), Flores et al.
patent: 5523246 (1996-06-01), Yang
patent: 5585304 (1996-12-01), Hayashi et al.
patent: 5641695 (1997-06-01), Moore et al.

Affiliated with

Also associated with

Rating

Method of fabricating buried control elements in semiconductor d does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating buried control elements in semiconductor d, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating buried control elements in semiconductor d will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1802165