Method of fabricating bottom-gated polycrystalline silicon...

Details Method of fabricating bottom-gated polycrystalline silicon... Method of fabricating bottom-gated polycrystalline silicon...

2005-09-27

2005-09-27

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S149000

Reexamination Certificate

active

06949391

ABSTRACT:
A method of forming a thin film transistor includes forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an amorphous silicon layer on the gate insulating layer, crystallizing the amorphous silicon layer within an active region corresponding to the gate electrode to form a polycrystalline silicon layer, etching the amorphous silicon layer such that an etch rate of amorphous silicon is greater than an etch rate of polycrystalline silicon to form a semiconductor layer of polycrystalline silicon in the active region, and forming source and drain electrodes on the semiconductor layer.

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James S. Im, et al. “Single-Crystal Si Films For Thin-Film Transistor Devices.”Applied Physics Letters. vol. 70, No. 25, Jun. 23, 1997, pp. 3434-3436.

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