Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2004-12-10
2008-12-02
Jackson, Jr., Jerome (Department: 2815)
Semiconductor device manufacturing: process
Having organic semiconductive component
C257S040000
Reexamination Certificate
active
07459337
ABSTRACT:
A method of fabricating a bottom gate type organic thin film transistor is provided. The method includes the acts of: forming a gate conductive layer pattern on a substrate; forming a gate insulating layer on an exposed portion of the surface of the substrate and the gate conductive layer pattern; forming source/drain electrodes on the gate insulating layer to expose a portion of the surface of the gate insulating layer above on the gate conductive layer pattern; forming an organic semiconductor thin film on the exposed portion of the gate insulating layer; forming on the organic semiconductor thin film a passivation layer pattern exposing a portion of the surface of the organic semiconductor thin film; and forming an organic semiconductor thin film pattern by etching the exposed surface of the organic semiconductor thin film using the passivation layer pattern as an etch mask.
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Machine Translation of KR 10-2002-0084427.
Machine Translation of JP 2003-338629.
42nd Electronic Materials Conference Digest, pp. 24-25, Jun. 2000.
J. Vac. Sci. Technol. B 20(3), May/Jun. 2002, pp. 956-959.
Ahn Seongdeok
Joung Meyoung Ju
Kang Seung Youl
Kim Chul Am
Suh Kyung Soo
Blakely , Sokoloff, Taylor & Zafman LLP
Electronics and Telecommunications Research Institute
Ho Anthony
Jackson, Jr. Jerome
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