Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...
Reexamination Certificate
2007-04-03
2007-04-03
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth with a subsequent step acting on the...
C117S003000, C117S902000
Reexamination Certificate
active
11038990
ABSTRACT:
A polarization inverting region is formed by using a board comprising a single crystal of lithium tatalate of a stoichiometric composition or near to the stoichiometric composition and applying a direct current electric field having an electric field intensity equal to or lower than 5 [kV/mm] for 1 [second] or longer. A periodically poled region can be formed without needing a complicated constitution for applying a pulse voltage or a complicated constitution for applying a strong electric field.
REFERENCES:
patent: 2969787 (1999-08-01), None
patent: 3059080 (2000-04-01), None
patent: 2002-72266 (2002-03-01), None
Kadokura Kazutomo
Tokuda Katuhiko
Hiteshew Felisa
Rankin, Hill Porter & Clark LLP
Shimadzu Corporation
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