Method of fabricating bipolar transistors with buried collector

Details Method of fabricating bipolar transistors with buried collector Method of fabricating bipolar transistors with buried collector

1993-12-02

1994-09-27

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 35, 437 64, H01L 21265

Patent

active

053507002

ABSTRACT:
A method of fabricating a bipolar transistor with a buried subcollector by forming a collector layer and a base layer in a semiconductor substrate. A polysilicon layer is deposited over the base layer and spaced emitter and base contact regions formed in the base layer. A mask is formed over the emitter and base contact regions and the substrate anisotropically etched to form pedestals with vertical sidewalls. A masking layer is formed on the vertical sidewalls, and a large angle ion implant used to introduce ions beneath the collector layer, thereby forming a subcollector region.

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patent: 5183768 (1993-02-01), Kameyama et al.
patent: 5219767 (1993-06-01), Kohno
patent: 5266504 (1993-11-01), Blouse et al.
patent: 5270226 (1993-12-01), Hori et al.

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