Method of fabricating BiCMOS device

Details Method of fabricating BiCMOS device Method of fabricating BiCMOS device

1993-03-01

1994-08-16

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 59, 437162, 148DIG9, H01L 21265

Patent

active

053386965

ABSTRACT:
A BiCMOS method and device. The BiCMOS device achieves improved performance through the use of wraparound silicide contacts, improved MOS gate formation, the use of n- and p-type LDD's, the formation of very shallow base regions in bipolar transistors, and through separate implants for base regions of the bipolar transistors and source/drains of the MOSFETS.

REFERENCES:
patent: 4735912 (1988-04-01), Kawakatsu
patent: 5079182 (1992-01-01), Ilderem et al.
patent: 5139966 (1992-08-01), Jerome et al.
patent: 5169794 (1992-12-01), Iranmanesh
patent: 5219784 (1993-06-01), Solheim

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