Method of fabricating auxiliary gate lightly doped drain (AGLDD)

Details Method of fabricating auxiliary gate lightly doped drain (AGLDD) Method of fabricating auxiliary gate lightly doped drain (AGLDD)

1993-07-30

1995-05-02

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437200, 257344, H01L 21336

Patent

active

054119065

ABSTRACT:
In a method for producing an auxiliary gate lightly doped drain structure, a gate region is placed on a substrate between two source/drain regions. A first implant of atoms is made into the substrate on two sides of the gate region. Sidewalls are formed on the two sides of the gate region. Auxiliary gate regions are formed over the sidewalls. The auxiliary gate regions are separated from the gate region by the sidewalls. Dielectric regions are formed over the auxiliary gate regions. A second implant of atoms is performed into the substrate on two sides of the dielectric regions. The sidewalls and the auxiliary gate regions are composed of resistive material.

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