Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2006-05-22
2008-10-21
Smith, Matthew S. (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C257SE21703, C257SE27111, C257S032000, C257S038000, C257S088000, C257S089000, C349S043000
Reexamination Certificate
active
07439089
ABSTRACT:
In a liquid crystal display device substrate, an insulating layer covers a thin film transistor. Another insulating layer covers a black matrix, which is formed on the insulating layer and covers the thin film transistor, a gate line, and a data line except a portion of a drain electrode. A first transparent conductive layer covers the top insulating layer and contacts the exposed portions of the drain electrode, a gate pad and a data pad. A buffer layer is formed on the first conductive layer and a color filter is formed on the buffer layer. The buffer layer is exposed by the color filter to reveal portions of the first conductive layer. A second transparent conductive layer covers the color filter and the revealed portions of the first conductive layer. The conductive layers are patterned to form pixel electrodes and double-layered gate and data pad terminals.
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Brinks Hofer Gilson & Lione
LG Display Co. Ltd.
Smith Matthew S.
Stark Jarrett J
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