Method of fabricating and passivating semiconductor devices

Details Method of fabricating and passivating semiconductor devices Method of fabricating and passivating semiconductor devices

1991-05-29

1993-09-28

Kunemund, Robert

Fishing, trapping, and vermin destroying

437 5, 437154, 437946, 437987, 156643, 156657, 257631, 257632, H01L 21465

Patent

active

052486354

ABSTRACT:
In a method of forming and passivating device regions in III-V semiconductor substrates, a substrate surface is pretreated in a halogen-carbon plasma prior to depositing of insulating or passivating layers. Devices produced by pretreating the substrate surface have considerably better electrical values than devices fabricated without this pretreatment. In particular, devices fabricated with this pretreatment have a low reverse current (dark current).

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