Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2007-11-20
2007-11-20
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C257SE21122, C438S455000
Reexamination Certificate
active
11149029
ABSTRACT:
Method of making an integrated passive, such as a high quality decoupling capacitor, includes providing a first temporary support, a silicon capacitor wafer, and providing an oxide layer and a conductive layer on it. Then, a second temporary support, such as a handle wafer, may be attached to the capacitor wafer (i.e., to the oxide layer on it) by an adhesive bond. The capacitor wafer may then be destructively removed. A second conductive layer is then provided on an exposed backside of the oxide layer. The addition of a second electrode on the second conductive layer yields the desired high quality capacitor. Further processing steps, such as solder bumping, may be carried out while the capacitor wafer is still attached to the handle wafer. When the desired processing steps are complete, the handle wafer is removed, and the relatively thin high quality integrated capacitor wafer results.
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Brown Terrence L. B.
Sarkar Asok Kumar
Shlesinger & Arkwright & Garvey LLP
The United States of America as represented by the National Secu
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