Method of fabricating an SOS island edge passivation structure

Details Method of fabricating an SOS island edge passivation structure Method of fabricating an SOS island edge passivation structure

1979-10-15

1980-12-30

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 29578, 29580, 148187, 156653, 156657, 1566591, 156662, 357 4, 357 23, 357 49, 357 54, 357 56, H01L 2186, H01L 2120

Patent

active

042421560

ABSTRACT:
A silicon-on-sapphire semiconductor structure, and method of fabricating such structure, in which a silicon nitride layer is provided over the oxide layer. The silicon nitride layer is disposed over the upper edge of the silicon island, and acts to prevent gate oxide breakdown.

REFERENCES:
patent: 3890632 (1975-06-01), Ham et al.
patent: 3974515 (1976-08-01), Ipri et al.
patent: 4002501 (1977-01-01), Tamura
patent: 4015279 (1977-03-01), Ham
patent: 4054895 (1977-10-01), Ham
patent: 4057824 (1977-11-01), Woods
patent: 4072974 (1978-02-01), Ipri
patent: 4097314 (1978-06-01), Schlesier et al.
patent: 4174217 (1979-11-01), Flatley

Affiliated with

Also associated with

Rating

Method of fabricating an SOS island edge passivation structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating an SOS island edge passivation structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating an SOS island edge passivation structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-5917