Method of fabricating an SOI wafer and SOI wafer fabricated ther

Details Method of fabricating an SOI wafer and SOI wafer fabricated ther Method of fabricating an SOI wafer and SOI wafer fabricated ther

1998-09-24

2000-10-31

Dang, Trung

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

438455, 438459, 438408, 438407, H01L 2130

Patent

active

061402109

ABSTRACT:
In a method of fabricating an SOI wafer, an oxide film is formed on the surface of at least one of two silicon wafers; hydrogen ions or rare gas ions are implanted into the upper surface of one of the two silicon wafers in order to form a fine bubble layer (enclosed layer) within the wafer; the ion-implanted silicon wafer is superposed on the other silicon wafer such that the ion-implanted surface comes into close contact with the surface of the other silicon wafer via the oxide film; heat treatment is performed in order to delaminate a portion of the ion-implanted wafer while the fine bubble layer is used as a delaminating plane, in order to form a thin film to thereby obtain an SOI wafer. In the method, a defect layer at the delaminated surface of the thus-obtained SOI wafer is removed to a depth of 200 nm or more through vapor-phase etching, and then mirror polishing is performed. Therefore, the obtained SOI wafer has an extremely low level of defects and a high thickness uniformity.

REFERENCES:
patent: 5882987 (1999-03-01), Srikrishnan
Burel, Michel. "Application of Hydrogen Ion Beams to Silicon On Insulator Material Technology," Nuclear Instruments and Methods in Physics Research B 108 (1996) pp. 313-319.

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