Method of fabricating an oxygen-stable layer/diffusion barrier/p

Details Method of fabricating an oxygen-stable layer/diffusion barrier/p Method of fabricating an oxygen-stable layer/diffusion barrier/p

1998-12-15

1999-12-07

Tsai, Jey

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438240, H01G 706

Patent

active

05998225&

ABSTRACT:
A capacitor structure and method. The capacitor (12) comprises a HDC dielectric (40) and upper (44) and lower electrodes. The lower electrode comprises polysilicon(31-32), a diffusion barrier (34) on the polysilicon and an oxygen stable material (36) on the diffusion barrier (34). The diffusion barrier (34) is deposited followed by the deposition of a temporary dielectric layer (50). The temporary dielectric layer (50) is then patterned and etched to expose the area where the storage node is desired. Next, the oxygen stable material (36) is deposited. The oxygen stable material (36) is then either etched back or CMP processed using the temporary dielectric layer (50) as an endpoint. The temporary dielectric layer (50) is then removed along with the exposed portions of diffusion barrier (34). The HDC dielectric (40) is then formed adjacent the oxygen stable material (36).

REFERENCES:
patent: 5393352 (1995-02-01), Summerfelt
patent: 5471364 (1995-11-01), Summerfelt et al.
patent: 5554564 (1996-09-01), Nishioka et al.
patent: 5566045 (1996-10-01), Summerfelt et al.
patent: 5585300 (1996-12-01), Summerfelt
patent: 5589284 (1996-12-01), Summerfelt et al.
patent: 5907762 (1999-05-01), Evans et al.
patent: 5909624 (1999-06-01), Yeager

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