Method of fabricating an MTJ with low areal resistance

Details Method of fabricating an MTJ with low areal resistance Method of fabricating an MTJ with low areal resistance

1998-07-20

2000-07-04

Bowers, Charles

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

257295, H01L 2100

Patent

active

060837640

ABSTRACT:
A method of fabricating a magnetoresistive tunnel junction including forming a thin, continuous layer of aluminum alloy on the surface of a first magnetic layer, the continuous layer of aluminum alloy including greater than 90% aluminum and traces of materials having atoms that are different from the atoms of the aluminum to produce grains which are smaller than grains of pure aluminum. The continuous layer of aluminum alloy is oxidized, nitridized, or both to produce a continuous layer of non-conductive material and a second magnetic layer is formed on the layer of non-conductive material.

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patent: 5715121 (1998-02-01), Sakakima et al.
patent: 5729410 (1998-03-01), Fontana, Jr. et al.
patent: 5757056 (1998-05-01), Chui
patent: 5764567 (1998-06-01), Parkin
patent: 5932343 (1999-08-01), Hayashi et al.
patent: 5948553 (1999-09-01), Kamijo

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