Method of fabricating an isolation trench for analog bipolar dev

Details Method of fabricating an isolation trench for analog bipolar dev Method of fabricating an isolation trench for analog bipolar dev

1994-04-12

1996-10-01

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 61, 437 62, 437 67, H01L 21265

Patent

active

055610730

ABSTRACT:
The present invention teaches a method of making an isolation trench. First, a silicon on insulator ("SOI") structure is provided having a conductive layer superjacent the insulator of the SOI. Second, a trench is formed down to the insulator of the SOI, thereby creating a first and second conductive region. Third, a first silicon dioxide layer is formed conformally with the sidewalls of the first and second conductive region. Fourth, a second silicon dioxide layer is formed conformally and superjacent the first silicon dioxide layer. Fifth, the remaining areas unfilled in the trench are filled with an undoped polysilicon filling. Sixth, the polysilicon layer is planarized. Seventh, an oxide cap is formed on top of the polysilicon refill. Eight, an isolation mask is formed, and the active area openings within the structure are etched down to the single crystal silicon.

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"The Effect of Trench Processing Conditions on Complementary Bipolar Analog Devices with SOI/Trench Isolation", By R. Jerome et al., 1993 IEEE, pp. 41-44.

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