Method of fabricating an integrated optoelectronic circuit

Details Method of fabricating an integrated optoelectronic circuit Method of fabricating an integrated optoelectronic circuit

2003-12-04

2004-11-16

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S029000, C438S099000, C438S107000

Reexamination Certificate

active

06818466

ABSTRACT:

BACKGROUND OF THE INVENTION
This disclosure relates to an optoelectronic circuit and more specifically to a combination of microwave and photonic components for a compact, self contained Mach-Zehnder interferometer (MZI) modulator.
Modulation of an optical signal at microwave frequencies, typically above 10 GHz, requires external modulation of a laser source to prevent unintentional modulation of the laser frequency (e.g. chirping). Towards this end, a Mach-Zehnder interferometer structure is often employed to create an optical phase and/or amplitude modulator. One or both arms of the Mach-Zehnder interferometer contains electrodes to permit phase modulation of an optical signal via the electro-optic effect. These electrodes require a drive amplifier to supply adequate electric field to produce the electro-optic effect. The amplifier requires sufficient bandwidth and output capability to drive the reactive load presented by the Mach-Zehnder electrodes.
Early electro-optic (EO) modulators required a large external power amplifier to provide hundreds of volts to produce the electro-optic effect. Recent devices have the modest drive requirement of 8-12 volts, but still require an external RF power amplifier to operate. Advances in polymer technology have allowed for the development of materials with large EO figures of merit, resulting in low V
&pgr;
numbers.
BRIEF DESCRIPTION OF THE INVENTION
An embodiment of the invention is a method of fabricating an integrated optoelectronic circuit. The method includes positioning a microchip on a first flexible dielectric substrate. A polymer electro-optic waveguide is positioned on or within the first flexible dielectric substrate. A ground electrode is positioned along the electro-optic waveguide. A signal electrode is positioned along the electro-optic waveguide opposite the ground electrode. A first patterned metallization layer is applied to the first flexible dielectric substrate. A second flexible dielectric substrate is positioned along the first flexible dielectric substrate. A plurality of via openings are provided in the first and second flexible dielectric substrates. A second patterned metallization layer is applied to the second flexible dielectric substrate.


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