Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Patent
1997-03-13
2000-09-05
Chaudhuri, Olik
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
438406, 438409, 438464, 438492, H01L 2148
Patent
active
061141887
ABSTRACT:
A method for the fabrication complex-transition metal oxide (CTMO)/semiconductor or dielectric substrate integrated devices includes the separation of the CTMO film growth process from the CTMO-film/semiconductor or dielectric substrate integration process. The CTMO-film is transferred from the native substrate to the final substrate for fabrication into devices. The CTMO-film is grown onto a native substrate under growth conditions chosen to provide a CTMO-film having desirable properties and thickness. No restrictions are placed upon the native substrate used, the growth method used, or on the growth conditions required. The CTMO-film is then joined to the semiconductor or dielectric substrate and the native substrate is removed, providing the basis for an integrated electronics, photonics, or MEMS device. Techniques fully compatible with semiconductor processing can be used to fabricate monolithically integrated CTMO/semiconductor devices in a first embodiment.
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McGruer Nicol E.
Oliver Steven A.
Vittoria Carmine
Zavracky Paul
Chambliss Alonzo
Chaudhuri Olik
Northeastern University
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