Method of fabricating an integrated circuit including hollow...

Details Method of fabricating an integrated circuit including hollow... Method of fabricating an integrated circuit including hollow...

2007-12-18

2007-12-18

Smith, Bradley K (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257SE21548

Reexamination Certificate

active

11110359

ABSTRACT:
A method is provided for fabricating an integrated circuit. According to the method, hollow isolating trenches are produced within a substrate, and active components are produced in and on active areas of the substrate that are between the trenches. The trenches are produced in an initial phase carried out before production of the active components and a final phase carried out after production of the active components. In the initial phase, trenches are formed in the substrate, and the trenches are filled with a fill material. In the final phase, the active components are encapsulated, accesses are created through the encapsulation material to each filled trench, the fill material is removed through each access, and the opening of each trench is plugged through the corresponding access. Also provided is an integrated that includes hollow isolating trenches within a substrate.

REFERENCES:
patent: 6096656 (2000-08-01), Matzke et al.
patent: 2003/0234423 (2003-12-01), Bul et al.
patent: 2003/0234433 (2003-12-01), Tran
patent: 2006/0131651 (2006-06-01), Sato et al.
patent: 1 209 738 (2002-05-01), None
patent: WO 03/096426 (2003-11-01), None
French Preliminary Search Report dated Nov. 3, 2004 for French Application No. 04 04222.

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