Method of fabricating an integrated circuit having a memory...

Details Method of fabricating an integrated circuit having a memory... Method of fabricating an integrated circuit having a memory...

2008-03-18

2010-11-02

Pham, Hoai V (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S103000, C257SE21583

Reexamination Certificate

active

07824951

ABSTRACT:
The present invention includes a memory cell device and method that includes a memory cell, a first electrode, a second electrode, phase-change material and an isolation material. The phase-change material is coupled adjacent the first electrode. The second electrode is coupled adjacent the phase-change material. The isolation material adjacent the phase-change material thermally isolates the phase-change material.

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A translation of the Notification of Reasons for Refusal for Application No. 10 2007 7020518 mailed Jun. 24, 2008 (3 pgs.).

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