Method of fabricating an inductor for a semiconductor device

Details Method of fabricating an inductor for a semiconductor device Method of fabricating an inductor for a semiconductor device

2011-01-25

2011-01-25

Pizarro, Marcos D. (Department: 2814)

Semiconductor device manufacturing: process

Making passive device

C257S531000, C257S277000, C336S200000, C336S205000, C336S232000

Reexamination Certificate

active

07875524

ABSTRACT:
The inductor for a semiconductor device includes at least one dielectric pattern selectively formed on a top of the interlayer dielectric, at least one first metal wire formed on a top of the interlayer dielectric, at least one second metal wire formed on a top of the dielectric pattern, and an upper protective film formed on the top of the interlayer dielectric to completely cover the first and second metal wires, wherein the first and second metal wires are alternately arranged at different vertical locations and are formed in a spiral configuration.

REFERENCES:
patent: 5446311 (1995-08-01), Ewen et al.
patent: 5656849 (1997-08-01), Burghartz et al.
patent: 6426267 (2002-07-01), Liou
patent: 6559751 (2003-05-01), Liu et al.
patent: 1141738 (2004-03-01), None
Office Action for Chinese patent app. 200610172437.9.

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