Method of fabricating an IC including electro-optical transmitte

Details Method of fabricating an IC including electro-optical transmitte Method of fabricating an IC including electro-optical transmitte

1983-11-18

1985-10-29

Hearn, Brian E.

Metal working

Plural diverse manufacturing apparatus including means for...

Common reciprocating support for spaced tools

29572, 29576W, 29580, 148 15, 148DIG50, 357 49, H01L 2120, H01L 21302, H01L 2176, H01L 3112

Patent

active

045493383

ABSTRACT:
An integrated circuit having active devices in electro-optical conversion material regions and single crystal silicon regions which are in a polycrystalline silicon support. The electro-optical conversion material regions are separated from the polycrystalline silicon by a containment layer. The method includes forming trenches in a wafer of electro-optical conversion material, covering the trenches with a containment layer and overfilling with polycrystalline silicon, removing material to expose polycrystalline silicon in the trenches and converting exposed portions of the polycrystalline silicon to single crystal silicon.

REFERENCES:
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patent: 3985590 (1976-10-01), Mason
patent: 4041475 (1977-08-01), Javan
patent: 4274104 (1981-06-01), Fang et al.
patent: 4408386 (1983-10-01), Takayashiki et al.
Fastow, R. M. et al., "Laser Growth of Thin Silicon Crystals in Patterned Structures" in Laser and Electron-Beam Solid Interactions and Materials Processing, Gibbons, Hess and Sigmon, Eds., El Sevier North Holland, Inc., 1981.

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