Method of fabricating an I.sup.2 L element and a linear transist

Details Method of fabricating an I.sup.2 L element and a linear transist Method of fabricating an I.sup.2 L element and a linear transist

1981-09-25

1983-09-20

Saba, W. G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576E, 29576W, 29578, 148 15, 148175, 148187, 357 35, 357 46, 357 92, H01L 2120, H01L 2174

Patent

active

044047380

ABSTRACT:
An integrated circuit device is provided in which an I.sup.2 L element and linear transistor are formed on a single chip such that they coexist. In this device, the base and collector regions of a vertical transistor of the I.sup.2 L element are formed such that they are deeper than the base and emitter regions of the linear transistor.

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patent: 4260906 (1981-04-01), Tokumaru et al.
patent: 4272307 (1981-06-01), Mayrand
Kindl, T. E., "LSI System" I.B.M. Techn. Discl. Bull., vol. 21, No. 2, Jul. 1978, pp. 494-497.

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