Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2007-05-15
2007-05-15
Gupta, Yogendra N. (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S089000, C117S101000, C117S102000, C117S105000, C117S935000, C117S936000
Reexamination Certificate
active
10934188
ABSTRACT:
A method of fabricating an epitaxial silicon-germanium layer for an integrated semiconductor device comprises the step of depositing an arsenic in-situ doped silicon-germanium layer, wherein arsenic and germanium are introduced subsequently into different regions of said silicon-germanium layer during deposition of said silicon-germanium layer. By separating arsenic from germanium any interaction between arsenic and germanium is avoided during deposition thereby allowing fabricating silicon-germanium layers with reproducible doping profiles.
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Babcock Jeffrey A.
Balster Scott
El-Kareh Badih
Haeusler Alfred
Pinto Angelo
Brady III W. James
Ewald Maria Veronica
Garner Jacqueline J.
Gupta Yogendra N.
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