Method of fabricating an end face light emitting type light-emit

Details Method of fabricating an end face light emitting type light-emit Method of fabricating an end face light emitting type light-emit

1996-07-18

1999-02-02

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

H01L 21383

Patent

active

058664394

ABSTRACT:
In a fabricating method for an end face light emitting type LED array, p-type regions are formed by diffusing impurities into portions of a semiconductor substrate, using a diffusion prevention film as a mask. Subsequently, using the diffusion prevention film as a mask again, the semiconductor substrate is etched to form a concave portion therein so that light-emission end faces are formed on a side of the concave portion. With this arrangement, a positional misalignment between the p-type regions and the light-emission end faces is prevented.

REFERENCES:
patent: 4912533 (1990-03-01), Takahashi
patent: 5357123 (1994-10-01), Sugawara

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