Method of fabricating an BPSG-filled trend and oxidation isolati

Details Method of fabricating an BPSG-filled trend and oxidation isolati Method of fabricating an BPSG-filled trend and oxidation isolati

1993-03-09

1994-11-08

Fourson, George

Fishing, trapping, and vermin destroying

437228, H01L 21302, H01L 2176

Patent

active

053626680

ABSTRACT:
The invention provides a method of fabricating a semiconductor device by forming, on a P-type silicon substrate, a memory cell portion partitioned with a field oxide film, forming trenches in self-alignment with a polycrystalline silicon film which act as gate electrodes in the semiconductor device, completely burying second and third oxide films in the trenches, removing the third oxide film near the end of the field oxide film by using a second resist film as a mask and thereafter etching-back the whole surface to cause the second and third oxide films to remain only in the trenches. According to the method, the oxide film can be stably buried in the trenches.

REFERENCES:
patent: 4571819 (1986-02-01), Rogers et al.
patent: 4740480 (1988-04-01), Ooka
patent: 5217920 (1993-06-01), Mattox et al.
patent: 5229319 (1993-07-01), Nishio
patent: 5231046 (1993-07-01), Tasaka
patent: 5275965 (1994-01-01), Manning

Affiliated with

Also associated with

Rating

Method of fabricating an BPSG-filled trend and oxidation isolati does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating an BPSG-filled trend and oxidation isolati, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating an BPSG-filled trend and oxidation isolati will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1782187