Method of fabricating an asymmetric lightly doped drain transist

Details Method of fabricating an asymmetric lightly doped drain transist Method of fabricating an asymmetric lightly doped drain transist

1995-01-06

1996-04-23

Thomas, Tom

Fishing, trapping, and vermin destroying

437 35, 437 40, H01L 218234

Patent

active

055102794

ABSTRACT:
A method of fabricating an asymmetric lightly doped drain transistor device. The device's drain region is shielded with a barrier layer when ion implantation is applied to a implant a highly doped source region. A large angle implantation then follows to form a lightly doped pocket region adjacent to the highly doped source region. The implantation forming the pocket region increases the doping concentration along the device's source side which increases the device's threshold voltage diminishing short channel effects.

REFERENCES:
patent: H986 (1991-11-01), Codella et al.
patent: 5210044 (1993-05-01), Yoshikawa
patent: 5316961 (1994-05-01), Okazawa
patent: 5366915 (1994-11-01), Kodama
patent: 5371394 (1994-12-01), Ma et al.
patent: 5376566 (1994-12-01), Gonzalez

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