Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1982-04-28
1984-03-20
Hoffman, James R.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427 74, C23C 1100
Patent
active
044381549
ABSTRACT:
In the method of forming an amorphous silicon film on a substrate supported on an electrode facing a discharging electrode within an evacuated reaction chamber through decomposition of a reacting gas introduced therein and containing at least silicon hydride such as SiH.sub.4 along with or without a doping impurity gas, by glow dicharging developed across the facing electrodes through application of a high frequency (radio frequency) electric power the oppose across, the improvement wherein: the power density of the electric power applied for glow discharging is so set that the ratio of the electric power relative to the discharging surface area of the discharging electrode is 0.3 W/cm.sup.2 or greater, and the ratio F/V of the total flow rate F (l/min.) relative to the volume V (l) of the reaction chamber is 0.01 min..sup.-1 or greater. The resulting a-Si film has a high resistivity in darkness and a large photosensitivity which are suitable for electrophotography.
REFERENCES:
patent: 4363828 (1982-12-01), Brodsky et al.
patent: 4369205 (1983-01-01), Winterling et al.
Kato Kazuhisa
Yasui Masaru
Hoffman James R.
Stanley Electric Co. Ltd.
LandOfFree
Method of fabricating an amorphous silicon film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of fabricating an amorphous silicon film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating an amorphous silicon film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1604145