Method of fabricating an abrupt hetero interface by organometall

Details Method of fabricating an abrupt hetero interface by organometall Method of fabricating an abrupt hetero interface by organometall

1997-01-24

1999-11-30

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438 45, 117 89, H01L 2120

Patent

active

059941588

ABSTRACT:
A method of fabricating an abrupt hetero interface by organometallic vapor growth comprises supplying a first Group III source gas at a predetermined flow rate and a first Group V source gas at a predetermined flow rate to a growth chamber during a first growth process to form a first Group III-Group V compound layer. During a growth interruption process, the inflow of the first Group III source gas to the growth chamber is stopped, while the supply of the first Group V source gas to the growth chamber is continued, to thereby interrupt the growth of the first Group III-Group V compound layer. Finally, during a second growth process, the first Group V source gas flowing into the growth chamber is switched to a second Group V source gas, and a second Group III source gas is simultaneously supplied at a predetermined flow rate to the growth chamber, thereby forming a second Group III-Group V compound layer on the first Group III-Group V compound layer.

REFERENCES:
M. Yasuyuki et al., "Fabrication of GaInAsP/InP Heterostructure for 1.5 um Lasers by OMVPE", Transactions of the Institute of Electronics, Information and Communication Engineers of Japan, vol. E 70, pp. 121-128, Feb. 1987.
"OMPVE Growth of GaInAs/InP and GaInAs/GaIAsP Quantum Wells", Kamei et al, Journal of Crystal Growth 107 (1991) pp. 567-572.
Miyamoto Yasuyuki et al., "Fabrication of GaInAsp/InP Heterostructure For 1.5 M Lasers By OMVPE", Transactions of the Institute of Electronics, Information and Communication Engineers of Japan, Feb. 2, 1987, pp. 121-128, vol. E70, No. 2.
Imanishi et al., "Improvement of InA1As/InP Heterinterface Grown By Movpe By Using Thin Alp Layer", Proceedings of the International Conference on Indium Phosphide and Related Materials, Santa Barbara, 3/27-31/94, pp. 575-578.
Kawabata et al., "Metalorganic Chemical Vapor Deposition of InGaAsP/InP Layers and Fabrication of 1.3-UM Planar Buried Heterostructure Lasers", Journal of Applied Physics, Oct. 1, 1988, pp. 3684-3688.
Kamei et al., "Growth of Ga1-xInxAs Layers With Excellent Compositional Uniformity on InP By OMVPE", 9/28-10/1/86, pp. 183-186, Gallium Arsenide and Related Compounds, Las Vegas and Bristol.
Kamei et al., "OMVPE Growth of GaInAs/InP and GaInAs/GaInAsP Quantum Wells", Journal of Crystal Growth, Jan. 1, 1991, pp. 567-572, vol. 107, No. 1/4.

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