Method of fabricating amorphous memory devices of reduced first

Details Method of fabricating amorphous memory devices of reduced first Method of fabricating amorphous memory devices of reduced first

1979-06-19

1981-06-09

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

357 2, 4271262, 4273741, 204192S, H01L 4500

Patent

active

042725623

ABSTRACT:
The first fire voltage of amorphous memory devices are reduced by forming the storage element of two layers, the first being in the crystalline state and the second being the amorphous state. The process deposits a first layer of switchable material and raises the temperature to crystallize the first layer. The wafer is then cooled and the remainder of the switchable material to form the storage element is deposited in an amorphous state.

REFERENCES:
patent: 3918032 (1975-11-01), Nicolaides
patent: 3920461 (1975-11-01), Asahara et al.
patent: 3983542 (1976-09-01), Ovshinsky
patent: 4115872 (1978-09-01), Bluhm
patent: 4177475 (1979-12-01), Holmberg
patent: 4180866 (1979-12-01), Shanks
patent: 4181913 (1980-01-01), Thornburg

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