Method of fabricating AlGaInP light-emitting diode and...

Details Method of fabricating AlGaInP light-emitting diode and... Method of fabricating AlGaInP light-emitting diode and...

2006-03-28

2006-03-28

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C257S079000

Reexamination Certificate

active

07018859

ABSTRACT:
A soft transparent adhesive layer is utilized to bond a transparent substrate material onto an AlGaInP light-emitting diode epitaxy on a GaAs substrate, and the GaAs substrate is next removed entirely. Then, a mesa etching process is performed to form a first top surface and a second top surface on the AlGaInP light-emitting diode epitaxy for respectively exposing an n-type layer and a p-type layer in the AlGaInP light-emitting diode epitaxy. Next, a metal reflective layer and a barrier layer are formed on the AlGaInP light-emitting diode epitaxy in turn, and electrodes are finally fabricated on the barrier layer.

REFERENCES:
patent: 6876005 (2005-04-01), Hsieh et al.

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