Method of fabricating active layers in a laser utilizing...

Details Method of fabricating active layers in a laser utilizing... Method of fabricating active layers in a laser utilizing...

2005-04-05

2005-04-05

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S045013, C372S046012, C438S045000, C438S046000, C438S047000

Reexamination Certificate

active

06876686

ABSTRACT:
A laser and method for making the same are disclosed. The laser includes a p-layer, an n-layer, and an active region located between the p-layer and the n-layer. The active region includes a quantum well layer sandwiched between first and second barrier layers. The quantum well layer includes an InP-based material. The first and second barrier layers also include an InP-based material. The barrier layers are homogeneous layers of the InP-based material. The barrier layers are preferably deposited by chemical vapor deposition from precursors that include a surfactant element that inhibits the formation of P—P dimers on a surface of the barrier layer during the deposition process. In one embodiment, the surfactant element is chosen from the group consisting of Sb, Si, and Te, and the barrier material includes InGaP or AlInP.

REFERENCES:
patent: 6292502 (2001-09-01), Shimada
patent: 20020081764 (2002-06-01), Springthorpe et al.
patent: 20040065363 (2004-04-01), Fetzer et al.
G.B. Stringfellow et al. “Surfactant Effects on Ordering in GaInP Grown by OMVPE,” MRS Bulletin, Fall 1999.*
Fetzer et al. “The use of a surfactant (Sb) to induce triple period in GaInP,” Applied Letters, vol. 76, No. 11, Mar. 2000, pp. 1440-1442.*
Fetzer et al. “Effect of surfactant Sb on carrier lifetime in GaInP epilayers,” J. of Applied Physics, vol. 91, No. 1, Jan. 2002, pp. 199-203.

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